Sputter pulse laser deposition of high purity titanium target
It is a special electronic material with high added value. It has strong wear resistance and strong adhesion at home and abroad.
Product Name: Titanium Target Grade: gr1 gr2 gr5
Purity: 99.5% or more Density: ≥4.51g/cm^3
Baoji gr2 coated titanium target titanium alloy processing parts
Titanium targets are widely used in the decorative and functional coating industry, flat display industry, optical data storage industry (disc industry), optical communication industry and other industries.
Gr1 gr2 gr5 titanium sputtering titanium target
Targets are commonly used in the coating industry. In general alloy targets, density and composition uniformity are particularly important. During the melting process of alloy targets, some elements are easily volatilized or segregated, resulting in a difference in the proportion of alloying elements in the ingot. Therefore, in the preparation process, Has certain technical problems.
TITANIUM ALLOY TARGET
Sputtering is one of the main techniques for preparing thin film materials. It uses ions generated by an ion source to accelerate and aggregate in a vacuum to form a high-speed energy ion beam, bombarding a solid surface, and kinetic energy exchange between ions and solid surface atoms. The atoms on the solid surface are separated from the solid and deposited on the surface of the substrate. The bombarded solid is a raw material deposited by sputtering, called a sputtering target.
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High-purity titanium target, sputter-coated high-purity Ti target – physical properties:
Chemical symbol: Ti
Number of atoms: 47.867
Density: 4.5g/cm3
Melting point: 1700 ° C
Boiling point: 3287 ° C
Critical temperature: 4350 ° C
Resistivity / μΩ.cm: 43 to 47
Linear expansion coefficient / °C-1: 8.5 × 10-6
Vaporization temperature / ° C: 1577
Temperature coefficient of resistance / °C-1: 3.50 × 10-3
Wave length / nm: 630
Color ratio n: 2.9
Extinction coefficient k: 3.3
Reflectance /%: 55.6
Evaporation temperature: 1750 when the saturated vapor pressure is 1.33Pa
Evaporation source material: (W, Ta) (silk, sheet), (C, ThO2)坩埚
Features: High mechanical strength, good plasticity, easy processing and good corrosion resistance.
Uses: Mainly used as a getter material in semiconductor materials and ultra-high vacuum devices.
Application:
At present, titanium targets are widely used in the decorative and functional coating industry, flat display industry, optical data storage industry (optical disc industry), optical communication industry and other industries. It is a special electronic material with high added value, wear resistance at home and abroad. Strong and strong high-quality titanium targets are in increasing demand and have good market prospects.
Targets are commonly used in the coating industry. In general alloy targets, density and composition uniformity are particularly important. During the melting process of alloy targets, some elements are easily volatilized or segregated, resulting in a difference in the proportion of alloying elements in the ingot. Therefore, in the preparation process, Has certain technical problems.
Mo-Ti alloy targets are mainly produced by powder metallurgy. The most common preparation methods are hot press sintering (HP) and hot isostatic pressing (HIP). Patent Application No. CN201210497167.4 discloses a method for preparing a molybdenum-titanium alloy target by mixing molybdenum powder, titanium powder and a forming agent to obtain a molybdenum-titanium alloy powder, and then performing vacuum hot press forming to prepare an alloy. Target. The invention patent of application number CN201310744517.7 discloses a preparation method of a high-density, large-size, high-uniformity molybdenum-titanium alloy target. The method comprises the steps of: adding a solvent and a binder to the molybdenum powder and the Ti powder to form a slurry, and then spraying and granulating the slurry with a spray machine to obtain a Mo-Ti powder, and preparing the target by hot isostatic pressing after the blank is prepared. material. Figure 1 is a high-magnification structure of a molybdenum-titanium alloy target prepared by the prior powder metallurgy method. It can be seen from the figure that the molybdenum-titanium alloy target has a porous loose structure, and therefore, the molybdenum-titanium alloy target density cannot reach 100%. Theoretical density. Moreover, the hot press forming process using high temperature and high pressure is limited by the use conditions of the device, the cost is high, and the target size can be adjusted to a narrow range, which is not conducive to mass industrial production.
Background technique:
Physical Vapor Deposition (PVD) is widely used in high-end industries such as optics, electronics, and information, such as integrated circuits, liquid crystal displays (LCDs), industrial glass, camera lenses, information storage, and ships. , chemical, etc. The metal target component used in PVD is one of the most important raw materials in the manufacturing process of integrated circuits and liquid crystal displays. Titanium (Ti) target is a typical metal target. Because titanium target has good corrosion resistance, good electromagnetic shielding performance, and can be used as an energy material, it is widely used in PVD. . For example, titanium can be used on other metal surfaces as a decorative and protective coating, which can be produced by vacuum sputtering a titanium target. Therefore, the internal structure of the titanium target and the size of the crystal grains are the key factors determining whether the finally obtained titanium target component can satisfy the semiconductor sputtering demand.
In the prior art, the process of plastically deforming a high-purity titanium ingot to produce a high-purity titanium target for semiconductor involves less and imperfect. Therefore, the titanium target produced by forging has been difficult to meet the current product. Production needs.
The quality of the film formed on the substrate by the sputtering method is affected by the surface roughness of the target for sputtering. When a protrusion having a size exceeding a certain level exists on the surface of the target, an abnormal discharge (micro-arc discharge) can be generated on the protrusion. The abnormal discharge can cause large particles to be spilled from the surface of the target and deposited on the substrate. The deposited large particles can form spots on the film and cause short circuits of the semiconductor device.
Many materials can be used to make targets, including copper, aluminum, titanium, and the like. In a particular application, the target may comprise an alloy or a mixture of other metals, such as one or more of copper, aluminum, tantalum. The target may also comprise a so-called “high purity” form of a particular metallic material, such as one or more of copper, aluminum, titanium.
99.9% ~ 99.9999 ° / in the species. Purity.
At present, when titanium is processed to produce a target, it is found that titanium is easily deformed at a high speed processing, resulting in inconsistent surface texture after processing and a large surface roughness.